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Abstract

We deposited successfully Ga-doped ZnO (GZO) thin films by using magnetron Dcsputtering technique, followed by annealing. The effects of the thermal annealing on thermoelectric properties of GZO films were investigated. The obtained results showed that due to annealing, the thermoelectric properties of the GZO films were significantly enhanced: (1) power factor increased with an increase of electron mobility due to high film crystallinity; (2) The figure of merit ZT values of the GZO film annealed at 500 oC (ZT = 0.114) was one order higher the asdeposited GZO film (ZT = 0.012). The room temperature photoluminescence (PL) spectra depicted various kinds of point defects which controlled thermoelectric properties and both oxygen vacancies VO and zinc interstitial Zni played an important role.



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Issue: Vol 2 No 4 (2018)
Page No.: 155-160
Published: Aug 14, 2019
Section: Original Research
DOI: https://doi.org/10.32508/stdjns.v2i4.823

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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Nguyen, N., Le, T., & Phan, T. (2019). Effects of the thermal annealing on the thermoelectric properties of Ga-doped ZnO thin films. Science and Technology Development Journal - Natural Sciences, 2(4), 155-160. https://doi.org/https://doi.org/10.32508/stdjns.v2i4.823

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